ZnSe/GaAs赝共格外延层中二聚体诱发的位错  

Stacking Faults Originating from Dimers in Pseudomorphic ZnSe/GaAs Epilayers

作　　者：冯国光[1] 王宁[1] 苏荫强[1] 

机构地区：[1]香港科技大学物理系

出　　处：《电子显微学报》1996年第2期191-199,共9页Journal of Chinese Electron Microscopy Society

摘　　要：在ZnSe/GaAs外延层中观察到完全的和不完全的层错四面棱锥体,层错梯形和层错管。本文提出一个模型:虽然这些层错的几何形状不同,但它们都起始于同一个源-界面处Se二聚体链构成的矩形环。此模型可以解释所有这些层错的组态。本文还指出这些抽出和插入型层错(尤其是层错管)的张应力和压应力对外延层退化过程中间隙原子或空位的扩散可能起着重要的作用。Complete and incomplete stacking fault pyramids, stacking fault trapezoids and stacking fault tubes have been observed in ZnSe/GaAs epilayers. We postulate that despite their very different geometrical shapes,these faults originate from the same kind of rectangular loops at the ZnSe/GaAs interface. The initiating loop is the boundary of an array of dimer rows of Se at the interface. All the observed fault configurations can be accounted for by the proposed dimer model. We also note that the tensile and compressive nature of the intrinsic and ex-trinsic stacking faults, especially in the stacking fault tubes, may play a role in the diffusion of interstitials and vacancies in the degradation of the epilayers.

关 键 词：二聚体 层错 梯杆位错 外延层 外延生长 半导体 

分 类 号：TN304.054[电子电信—物理电子学]