高温对Ge_xSi_(1-x)/Si光波导及材料的影响  

Effect of High Temperature on GexSi_(1-x)/Si Crystal and Optical Waveguides

作　　者：李国正[1] 高勇[1] 刘恩科[1] 

机构地区：[1]西安交通大学电子工程系

出　　处：《固体电子学研究与进展》1996年第1期34-37,共4页Research & Progress of SSE

基　　金：国家自然科学基金

摘　　要：用ＧｅｘＳｉ１－ｘ／Ｓｉ亚稳材料在高温下制作了光波导，它的传输损耗为０．８ｄＢ／ｃｍ，比低温工艺的０．５ｄＢ／ｃｍ稍大。并发现ＧｅｘＳｉ１－ｘ／Ｓｉ材料的大量失配位错和一些有趣的现象。The GexSi1-x/Si optical waveguides were fabricated after high temperature processing.It is found that the GexSi1-x/Si crystal has a lot of dislocation defects and some interesting phenomena.propagation losses of the waveguides is about 0.8 dB/cm.Which is higher than one of the waveguides by low temperature processing.

关 键 词：位错 光波导 硅化锗 

分 类 号：TN304.2[电子电信—物理电子学] TN814.6