BSIT开启特性的研究  

Studies on the Open Properties of BSIT

作　　者：李思渊[1] 刘瑞喜[1] 李成 刘肃 杨建红[1] 韩永召 

机构地区：[1]兰州大学物理系

出　　处：《兰州大学学报（自然科学版）》1996年第2期37-45,共9页Journal of Lanzhou University(Natural Sciences)

摘　　要：双极型静电感应晶体管（ＢＳＩＴ）以其高电流增益，低饱和压降以及高的开关速度等优异性能受到人们的广泛关注．但对其作用机制，特别是正栅压下的开启特性还需进一步深入研究．在实验观测的基础上，对ＢＳＩＴ开通过程进行了理论分析和二维数值模拟．结果表明，ＢＳＩＴ的完全开通须经过不同作用机制的两个阶段的转变，即由正向小栅压（ＶＧ≤０．５Ｖ）下的势垒控制机制转变为大栅压（ＶＧ≥０．５Ｖ）下的少子注入电流控制机制．数值计算给出的结果有：小栅压下沿沟道中心线的电势分布；沿沟道的少子和电场分布；开态的Ｉ－Ｖ特性；通态压降与饱和电流随正栅压的变化；通态电阻随栅压和材料参数的变化；特别是电流增益随栅压。Great attention has been paid to the Bipolar static Induction Transistor(BSIT) for its advantages, such as high current gain, low voltage arop and high turn on and turn off spead, etc. But further studies should be carried out on its regime, especially of the open of BSIT under positive gate voltage. The theoretical analysis and two dimensional numerical simulation on the open process of the bipolar static induction transistor(BSIT) clealy demonstrate that the complete open of BSIT must go through two stages governed separately by the two different operational mechanisms, namely, the potential barrier modulation mechanism under a low positive gate bias and the mechanism, controlled by the injection of minority carriers from the gate to channel under a higher positive gate bias (V G>0 5V).The numerical results obtained include: the potential distribution along the channels central line under a low gate voltage; the distributions of minority carrier and the electric field along the channel; the I V characteristics for on state; the variations of the on state voltage drop and saturated drain current with the applied positive gate bias; the variations of the on resistance with a gate bias and the material parameters; especially the variations of the current gain with a gate bias, drain current and the material parameters.

关 键 词：模拟 双极型 静电感应晶体管 开启特性 

分 类 号：TN386.7[电子电信—物理电子学]