射频溅射制备碳氮薄膜及其结构分析  

Carbon Nitride Films Prepared by Reactive Sputtering and Their Structural Analysis

作　　者：彭军[1] 崔敬忠[1] 

机构地区：[1]兰州大学物理系

出　　处：《兰州大学学报（自然科学版）》1996年第1期46-48,共3页Journal of Lanzhou University(Natural Sciences)

摘　　要：报道了用射频等离子体溅射的方法在高阻单昌硅衬底上制备碳氮非晶薄膜，并利用拉曼光谱和红外吸收谱对其进行的结构分析研究。分析结果表明该膜中氮主要以Ｃ≡Ｎ，Ｃ＝Ｎ键形式与碳结合。Carbon nitride amorphous films prepared by rf sputtering and their structral analysis are reported in this paper. IR, Raman properites of the film indicate that nitrogen is mainly incorporated in C N , C N bonds in the film. After annealing, the C N single bonds are detected in IR spectra. The promotion effect of annealing to form C N single bond in the film is discussed.

关 键 词：结构 退火 碳氮薄膜 射频浅射法 

分 类 号：O484.1[理学—固体物理]