WSi栅耗尽型高电子迁移率晶体管制作  

Depletion mode HEMT with WSi gate

作　　者：陈定钦[1] 

机构地区：[1]中国科学院半导体研究所

出　　处：《半导体光电》1996年第1期47-49,共3页Semiconductor Optoelectronics

基　　金：国家自然科学基金

摘　　要：用国产ＭＢＥ调制掺杂材料研制了具有难熔金属硅化物（ＷＳｉ）栅的耗尽型高电子迁移率晶体管器件。这种低噪声器件的栅长和栅宽分别为１．２～１．５μｍ和２×１６０μｍ。制作该器件的材料的电子迁移率，在３００Ｋ温度下为６０８０ｃｍ２·Ｖ－１ｓ－１，７７Ｋ时为６８０００ｃｍ２·Ｖ－１·ｓ－１。二维电子密度（ｎｓ）为９×１０１１ｃｍ－２。源与漏的触点使用ＡｕＧｅＮｉ／Ａｕ通过蒸发技术制作，为减小触点电阻，在５２０℃的温度下放在氢气环境中合金３ｍｉｎ。ＷＳｉ栅器件的室温跨导为１１０～１３０ｍＡ／Ｖ。可用于通信卫星的３．８３ＧＨｚ及雷达接收机的１．５ＧＨｚ频道。它的噪声系数约为２－３ｄＢ。It is reported that depletion mode HEMT with refractory metal silicide WSi gate has been designed and fabricated.Epitaxial modulation doping materials were grown by a home-mode MBE system. The gate length and width for low noise depletion devices was 1.2-1.5μm and 2×160μm respectivel.The electron mobility of the fabricat ed devices is typically 6 080 cm2/V.s at 300 K and 68 000 cm2/V.s at 77 K.The sheet elec tron concentration(ns)is 9×1011 cm-2.The source and drain contacts with AuGeNi/Au were fabricated using evaporation d lift-off technique.To further reduce the contact re sestance,the wafer was alloyed at 520℃ for 3 min in the hydrogen(H2)gas.The transcon ductance of the depletion mode device with WSi gate is 110- 130A/V at room tempera ture.The devices can be appllied in communication satellite at microwave frequency 3.83 GHz and radar receiver at 1.5 GHz.Its noise figure is about 2-3dB.

关 键 词：半导体器件 WSi栅 制造工艺 

分 类 号：TN320.5[电子电信—物理电子学]