GaAs　VHSIC的离子注入和快速热退火的均匀性研究  

Investigation of the Uniformity of Ion Implantation and Rapid Thermal Anneling for GaAs VHSIC

作　　者：梁玉英[1] 曾庆明[1] 宋东波[1] 

机构地区：[1]石家庄电子部第13研究所

出　　处：《半导体情报》1996年第3期30-37,共8页Semiconductor Information

摘　　要：研究了改变注入角、ｐ型埋层注入及红外快速热退火对ＧａＡｓＩＣ有源层均匀性的影响，得到了表面形貌好、大面积均匀性良好的注入掺杂有源层。在２英寸圆片上做出的场效应管无栅饱和电流相对偏差２．３％，器件阈值电压标准偏差９８ｍＶ。用该材料做出了６７２门ＧａＡｓ超高速门阵电路，还做出了工作频率为５ＧＨｚ的除二动态分频器。The influences on uniformity of active layer of GaAs IC by changing tilt and rotation angle on implant channeling and p-burried layer implanting and infra-red rapid thermal annealing have been studied in this paper. An active layer with better facial appearance and good uniformity across a large area were attained. The deviation ratio of current and the standard deviation of threshold voltage across 2 inch diameter GaAs are 2.3% and 98mV, respectively. With the material, 672 gates GaAs very high speed gate circuit and a divided-by-two dynamic frequency divider with operation frequency of 5GHzhave been obtained.

关 键 词：砷化镓 离子注入 快速热退火 

分 类 号：TN304.23[电子电信—物理电子学] TN305.3