N80C196KC20芯片的X射线剂量增强效应  

X-ray dose enhancement effects on N80C196KC20 chips

作　　者：杨怀民[1] 徐曦[1] 邓建红[1] 詹峻岭[1] 赵聚朝[1] 王旭利[1] 袁国火[1] 

机构地区：[1]中国工程物理研究院电子工程研究所,绵阳621900

出　　处：《核技术》2006年第3期198-201,共4页Nuclear Techniques

摘　　要：介绍大规模集成电路N80C196KC20单片机芯片在X射线辐射环境下性能的退化及剂量增强效应。用Intel公司的N80C196KC20单片机芯片进行X射线、钴源总剂量辐照试验，测量了电源工作电流ICC，芯片的功能失效表征了它的总剂量响应。芯片在较低的总剂量水平发生功能失效，γ失效总剂量-165Gy（Si）。芯片失效时工作电流发生快速增长。实验测量了N80C196KC20单片机芯片的X射线剂量增强系数，研究了剂量增强效应机理。The characteristics＇ degradation and X-ray enhancement effects of N80C196KC20 chips were presented in this paper. The X-ray and ^60Co irradiations of N80C196KC20 chips from Intel Company were performed to investigate the response of operating currents ICC. The operation failure symbolizes the total dose response of the chips The total dose failure level of the chips is very low, and the y total dose failure is about 165 Gy（Si）. The operating current of the chip increases significantly when failure of the chip happens. The X-ray enhanced factor of N80C196KC20 chip is measured and the X-ray enhancement mechanism is studied.

关 键 词：辐射效应 电离总剂量 计算机芯片 X射线剂量增强 

分 类 号：O571.42[理学—粒子物理与原子核物理] O571.32[理学—物理]