DRT MC SOI LIGBT器件漂移区新结构的可实现性  

Primary Exploration on Realizability of New Structures in Thinned Drift Region of DRT MC SOI LIGBT

作　　者：张海鹏[1] 邱晓军[1] 胡晓萍[1] 沈世龙[1] 杨宝[1] 岳亚富[1] 

机构地区：[1]杭州电子科技大学电子信息学院,杭州310018

出　　处：《电子器件》2006年第1期18-21,共4页Chinese Journal of Electron Devices

基　　金：国家自然科学基金资助(60306003);浙江省自然科学基金资助(y104599)。

摘　　要：简介了减薄漂移区多沟道SOILIGBT结构雏形,根据先进VLSI工艺调研结果讨论了减薄漂移区新型微结构的可实现性,提出了可能实现的三种表面微结构及其工艺实现方法;指出了这种器件雏形结构存在的几个主要问题,有针对性地探讨了改进措施,并提出了面向智能PowerICs应用的同心圆环源漏互包SOILIGBT结构,及其迄待研究的主要问题与部分解决措施。The prototype structure of DRT MC SOI LIGBT is simply introduced. The realizability of its new surface microstructures in thinned drift region is discussed at its various thicknesses according to the advanced VLSI technologies investigated at home, based on which three types of new surface microstructures and their realizable processes are presented. After that, some main troubles that lie in the prototype structure referred above are pointed out and corresponding troubles are discussed respectively. Based on all above a new DRT MC SOI LIGBT structure is proposed for smart Power ICs applications, which consists of concentric rings with intersurrounded source and drain, and its main problems need to be resolved urgently are put forward with some partial measures.

关 键 词：SOI LIGBT 减薄漂移区 新结构 可实现性 

分 类 号：TN432[电子电信—微电子学与固体电子学]