用两次键合技术制备均匀单晶硅膜  

Fabrication of Uniform Crystal Silicon Membrane Using Two-Step Silicon Direct Bonding Technology

作　　者：何芳[1] 黄庆安[1] 秦明[1] 

机构地区：[1]东南大学MEMS教育部重点实验室,南京210096

出　　处：《电子器件》2006年第1期69-72,75,共5页Chinese Journal of Electron Devices

基　　金：国家自然科学基金资助课题(60476019)

摘　　要：硅直接键合(SDB)技术用于制备SOI片(BESOI)是键合技术的最重要应用之一,研究了制备BESOI片中的键合和减薄问题,获得了大面积的均匀单晶硅膜,通过实验分析了这种方法获得的薄膜的平整度和影响因素。并针对压力传感器的敏感膜,通过两次键合及SOI自停止腐蚀成功制备了厚度可控的均匀单晶硅薄膜,硅膜表面质量优良,平整度在±0.15μm的范围内。SOI substrate fabricated by silicon direct bonding （SDB） is one of the most important applications of SDB. The problems of bonding and thinning in the fabrication of BESOI were studied, and the flatness and influencing factors of membrane fabricated by this method were analyzed from experiment. The thickness-controlled crystal silicon membrane which was employed to form the sensitive membrane of pressure sensor, was fabricated by two steps of SDB and SOl etch-stop. The surface quality of the membrane is ex- cellent and the flatness is in the range of ±0. 15μm

关 键 词：硅直接键合 减薄 单晶硅薄膜 MEMS 器件 

分 类 号：TP212[自动化与计算机技术—检测技术与自动化装置] TK124[自动化与计算机技术—控制科学与工程]