多弧离子镀沉积过程中等离子体参数对薄膜沉积的影响  

Effect of plasma parameters on thin film deposition during multi-arc ion coating

作　　者：车德良[1] 钟彬[1] 苟伟[1] 李国卿[1] 陈玲玲[1] 

机构地区：[1]大连理工大学三束材料改性国家重点实验室,辽宁大连116024

出　　处：《真空》2006年第2期5-8,共4页Vacuum

摘　　要：采用平面探针测试了衬底附近的电流密度,弧电流和衬底偏压的增加均有助于增加到达衬底附近的离子的数量。弧电流增加引起衬底的温升,衬底偏压对衬底温度影响较小。采用多弧离子镀技术沉积C r-N薄膜,衬底偏压对薄膜的硬度影响较小;弧电流增大,薄膜的硬度随之降低。XRD分析表明,弧电流较高时,不利于C r-N相的形成,薄膜中以C r的宏观液滴为主,薄膜硬度较低。Disk probe was used to detect the current density in the vicinity of substrate, and it is found that the increase in either are current of substrate bias is beneficial to the increase in the number of ions getting to the vicinity of substrate. The increase in arc current will cause the temperature rise of substrate, while the effect of substrate bias on its tempetature is weak. When the Cr-N thin films are deposited by multl-arc ion coating process, the substrate bias affects the film hardness not much and arc current is increasing and, as a result, the film hardness decreases. XRD patterns indicated that higher arc current will be disadvantageous to the formation of Cr-N phase . In the thin films the predominant component is the macroscopic Cr liquid drops, thus leading to comparatively low film hardness.

关 键 词：多弧离子镀 收集电流 偏压 弧电流 Cr—N薄膜 

分 类 号：TB43[一般工业技术]