Resonant Raman Scattering and Photoluminescence Emissions from Above Bandgap Levels in Dilute GaAsN Alloys  

低N含量GaAsN材料的共振喇曼散射及其带边以上的光致发光光谱(英文)

作　　者：谭平恒[1] 罗向东[2] 葛惟昆[2] 徐仲英[1] Zhang Y Mascarenhas A Xin H P Tu C W 

机构地区：[1]中国科学院半导体研究所超晶格国家重点实验室 [2]香港科技大学物理系 [3]National Renewable Energy Laboratory,Golden,Colorado80401,USA [4]Department of Electrical and Computer Engineering,University of Californiaat San Diego,LaJolla,California 92093,USA

出　　处：《Journal of Semiconductors》2006年第3期397-402,共6页半导体学报（英文版）

基　　金：国家自然科学基金(批准号:10404029,10334040,10274081) ;国家重点基础研究专项基金(批准号:G001CB3095);江苏省自然科学基金(批准号:BK2004403) ;香港RGC基金(批准号:HKUST6076/02P);美国ODE基金(批准号:DE-AC36-99GO10337)资助项目~~

摘　　要：The transitions of E0 ,E0 ＋A0, and E＋ in dilute GaAs（1-x） Nx alloys with x = 0.10% ,0.22% ,0.36% ,and 0.62% are observed by micro-photoluminescence. Resonant Raman scattering results further confirm that they are from the intrinsic emissions in the studied dilute GaAsN alloys rather than some localized exciton emissions in the GaAsN alloys. The results show that the nitrogen-induced E E＋ and E0 ＋ A0 transitions in GaAsN alloys intersect at a nitrogen content of about 0.16%. It is demonstrated that a small amount of isoelectronic doping combined with micro-photoluminescence allows direct observation of above band gap transitions that are not usually accessible in photoluminescence.利用显微光致发光技术,观测到了N含量为0 .1 %,0 .22 %,0 .36 %和0 .62 %的GaAsN合金的E_0, E_0+Δ_0和E+能级的光致发光峰.共振喇曼散射谱进一步证实了这些发光峰来源于所研究材料的本征能级,而不是来源于GaAsN合金中的一些局域激子发射.随着N组分的增加,E_0+Δ_0和E+能级分别向低能和高能方向移动并在N组分为0.16%时发生交错.文中提出了一种少量等电子掺杂和显微光致发光谱相结合的方法来直接观测半导体材料带边以上的跃迁能级,尽管光致发光谱通常没有用来观测这些能级位置.

关 键 词：GAASN resonant Raman scattering PHOTOLUMINESCENCE bandgap isoelectronic doping 

分 类 号：TN304[电子电信—物理电子学]