掺Er/Pr的GaN薄膜深能级的研究  

Deep level transient spectroscopy studies of Er and Pr implanted GaN films

作　　者：宋淑芳[1] 陈维德[2] 许振嘉[2] 徐叙 

机构地区：[1]北京交通大学光电子研究所,北京100044 [2]中国科学院半导体研究所,北京100083

出　　处：《物理学报》2006年第3期1407-1412,共6页Acta Physica Sinica

基　　金：国家自然科学基金(批准号:60176025);国家重点基础研究发展计划项目(973计划)(批准号2003CB314707);中国博士后科学基金(批准号:2005037302)资助的课题.~~

摘　　要：利用深能级瞬态谱(DLTS)、傅里叶变换红外光谱(FT-IR)对GaN以及GaN掺Er/Pr的样品进行了电学和光学特性分析.研究发现未掺杂的GaN样品只在导带下0·270eV处有一个深能级;GaN注入Er经900℃,30min退火后的样品出现了四个深能级,能级位置位于导带下0·300eV,0·188eV,0·600eV和0·410eV;GaN注入Pr经1050℃,30min退火后的样品同样出现了四个深能级,能级位置位于导带下0·280eV,0·190eV,0·610eV和0·390eV;对每一个深能级的来源进行了讨论.光谱研究表明,掺Er的GaN样品经900℃,30min退火后,可以观察到Er的1538nm处的发光,而且对能量输运和发光过程进行了讨论.Deep level transient spectroscopy measurements were used to characterize the electrical properties of metal organic chemical vapor deposition grown undoped, Er-implanted and Pr-implanted GaN films. Only one deep＇level located at 0. 270 eV below the conduction band was found in the as-grown GaN films. But four defect levels located at 0.300 eV, 0. 188 eV, 0.600 eV and 0.410 eV below the conduction band were found in the Er-implanted GaN films after annealing at 900℃ for 30 win, and four defect levels located at 0.280 eV, 0.190 eV, 0.610 eV and 0.390 eV below the conduction band were found in the Primplanted GaN films after annealing at 1050 ℃ for 30min. The origins of the deep defect levels are discussed. After annealing at 900℃ for 30min in a nitrogen flow, Er-related 1538nm luminescence peaks could be observed for the Er-implanted GaN sample. The energy-transfer and luminescence mechanism of the Er-implanted GaN film are described.

关 键 词：GAN ER PR 深能级 

分 类 号：O484.1[理学—固体物理]