硅的电阻率温度系数～电阻率关系Si几种拟合方法的比较  

Comparison Among Several Methods Of Matching The Relation Curve Of Temperature Coefficient Of Resistivity～Resistivity For Silicon

作　　者：孙以材[1] 宫云梅[1] 王静[1] 程东升[1] 张效玮[1] 

机构地区：[1]河北工业大学

出　　处：《传感器世界》2006年第3期12-16,共5页Sensor World

摘　　要：本文以硅单晶的电阻率温度系数～电阻率非线性曲线为应用对象,用直线最小二乘法、牛顿插值法、规范化多项式、MATLAB3次、4次及5次曲线分别进行拟合近似逼近,并得到各自的多项式,用到表和图线以作对比。结论是牛顿插值法、规范化多项式法、MATLAB5次曲线最为逼近。Matching the relation curve of temperature coefficient of rcsistivity-rcsistivity for silicon, as an objective example, wcrc carried out respectively using the least square criterion, Newton＇s value-insert, normalized polynomial and MATLAB three, four, five order curves. Comparison among their results arc presented with tables and figures. It is confirmed that Newton＇s value-insert, normalized polynomial and MATLAB five order curve arc the best in approximation.

关 键 词：电阻率温度系数 最小二乘法 牛顿插值法 规范化多项式法 MATLAB法 

分 类 号：O472.4[理学—半导体物理]