高浓度弛豫SiGe/SOI材料的制备研究  

A Study of the Preparation of Relaxed High Ge Fraction SiGe/SOI Film

作　　者：程新利[1] 张峰[2] 

机构地区：[1]苏州科技学院应用物理系,江苏苏州215009 [2]中科院上海微系统与信息技术研究所,上海200050

出　　处：《苏州科技学院学报（自然科学版）》2006年第1期39-44,共6页Journal of Suzhou University of Science and Technology （Natural Science Edition）

摘　　要：对SOI(绝缘体上的硅)衬底上外延生长的SiGe层进行了研究,并利用透射电镜、AES、Raman光谱、X-ray多晶衍射等技术对SiGe/SOI材料做了表征。结果表明:制备的材料中Ge/Si元素分布均匀,SiGe层是高度弛豫的,SiGe层中应变通过产生失配位错被释放出来。The SiGe layer grown on the SOl substrate was studied in this paper. TEM, AES, Raman spectrum and X-ray diffraction were used to characterize the SiGe/SOI materials. The result shows that the Ge or Si fraction is uniform in the SiGe layer. The SiGe layer is highly relaxed, and the strain in the SiGe layer was released by producing the mismatch dislocations.

关 键 词：SOI SiGe/SOI 应变 弛豫 

分 类 号：O782.9[理学—晶体学] TN304.9[电子电信—物理电子学]