以磁控溅射+自组装反应方式制备GaN薄膜  

Preparation of GaN Films with the Method of Magnetron Sputtering + Self-Assembly Reaction Mode

作　　者：薛成山[1] 董志华[1] 庄惠照[1] 王书运[1] 高海永[1] 田德恒[1] 吴玉新[1] 

机构地区：[1]山东师范大学,山东济南250014

出　　处：《稀有金属材料与工程》2006年第3期463-466,共4页Rare Metal Materials and Engineering

基　　金：国家自然科学基金资助项目(90201025;90301002)

摘　　要：为了用简单的方法得到GaN薄膜,以射频磁控溅射方法将Ga2O3薄膜沉积到Si(111)衬底上的SiC中间层上,通过其同NH3的自组装反应形成了GaN薄膜。同样,利用磁控溅射方法把SiC层沉积到Si衬底。其目的是为了缓冲由GaN外延层和Si衬底的晶格失配造成的应力。为了比较中间层的作用,对按照两种方案(使用中间层和不使用中间层)实验样品进行了测试和比较。实验结果证实了SiC中间层提高了GaN薄膜的质量。Ga2O3 films were deposited onto Si （111） substrates with radio frequency （r. f.） magnetron sputtering system, They self-assembled into GaN films after reacted with ammonia. The lattice mismatch between substrates and epitaxy layer affects the films＇ quality. In order to optimize the films, thin SiC films as intermediate layers also deposited onto the substrate with magnetron sputtering. The samples intermediate were compared. The results indicate intermediate layer＇s positive effect to GaN films.

关 键 词：射频磁控溅射 自组装 中间层 SIC 

分 类 号：TN304.05[电子电信—物理电子学]