InP材料的质谱分析及霍耳系数测量  

Mass Spectrographic Analysis of InP Material and its Hall Coefficient Measure

作　　者：徐建成[1] 陈亚宁 陈定钦[3] 

机构地区：[1]首都师范大学物理系 [2]北京西城职大 [3]中国科学院半导体研究所

出　　处：《电子器件》1996年第3期171-174,共4页Chinese Journal of Electron Devices

摘　　要：本文给出了ＩｎＰ材料（１００）和（１１１）晶面的质谱分析结果，并且对（１００）晶面做了光荧光分析。在室温和液氮条件下，测量了（１００）晶面的电子浓度及电子迁移率。研究表明沾污主要来自硅。In this paper, the physical properties of Indium phos-phide material are discussed. The mass spectrographic analysis results for crystal face (100) and (111) in the InP are given and Hall coefficient of the InP for face (100) is measured. And specifically the photoluminescence properties of Indium phosphide for crystal face (100) are investigated. Experimental results indicate that the contamination of silicon is predominant.

关 键 词：质谱分析 光荧光 电子浓度 电子迁移率 磷化铟 

分 类 号：TN304.23[电子电信—物理电子学]