高隔离度宽频带MEMS双膜桥开关  

High Isolation MEMS Double Membranes Switches for Broadband Application

作　　者：蔡洁[1] 廖小平[1] 朱健[1] 

机构地区：[1]东南大学MEMS教育部重点实验室,南京210096

出　　处：《半导体技术》2006年第4期290-294,共5页Semiconductor Technology

摘　　要：利用一种新型双边加直流驱动电极的电容耦合式MEMS并联膜开关与直接接触式并联膜开关进行级联,形成MEMS双膜开关。通过对其尺寸和结构的优化,降低开关阈值电压,Coventor软件模拟表明,开关的阈值电压小于20V;通过对其匹配设计改善开关的高频性能,HFSS软件模拟的结果表明,在DC～20GHz整个频带内,开关的插入损耗优于-0.1dB,反射损耗低于-30dB,隔离度低于-20dB,在谐振点处隔离度能达到-40dB。A double membranes switch, which composed of a capacitance MEMS shunt membrane switch and a DC contact MEMS shunt membrane switch are presented, both of the switches have DC drive pads. The pull-in voltage is lowed by the optimization of size and structure, and the pull-in voltage is less than 20V by Coventor Ware. The RF performance is improved by the structure matching design, and simulated by HFSS, at DC-20GHz, the insertion loss is 〈-0. ldB, and the retune loss is 〈- 30dB, the isolation is 〈-20dB for the whole band, and at the resonance point, the isolation can reach -40dB.

关 键 词：MEMS 双膜桥 阈值电压 插入损耗 反射损耗 隔离度 

分 类 号：TN43[电子电信—微电子学与固体电子学]