Mo原子溅射能量对Mo/Si薄膜微结构的影响  

Influence of sputtering energy of Mo atoms on microstructure of Mo/Si thin film

作　　者：秦俊岭[1] 易葵[1] 邵建达[1] 

机构地区：[1]中国科学院上海光学精密机械研究所

出　　处：《功能材料与器件学报》2006年第2期81-85,共5页Journal of Functional Materials and Devices

基　　金：教育部"同步辐射博士生创新中心"研究生创新基金资助

摘　　要：用磁控溅射法制备了Mo/Si薄膜,用AFM和XRD分别研究了Mo原子的溅射能量不同时,Mo/Si薄膜表面形貌和晶相的变化。通过比较发现,随着Mo原子溅射能量的增大,Mo/Si薄膜表面粗糙度增加,Mo和Si的特征X射线衍射峰也越来越强,并且Mo膜层和Si膜层之间生成了Mo-Si2。Mo原子的溅射能量是诱导非晶Si结晶和MoSi2生成的主要原因。Mo/Si bilayer thin films were prepared by sputtering Mo onto amorphous Si film grown on Si Mo/Si film is increasing, characteristic diffraction peaks of Mo and Si species beome stronger and stronger, furthermore, the peak of MoSi2 which may be formed between Mo layer and Si layer appears. Sputtering energy of Mo atoms is attributed to be the main cause for crystallization of amorphous Si and formation of MoSi2.

关 键 词：MO/SI MOSI2 溅射能量 

分 类 号：O484.4[理学—固体物理]