混合信号SoC中的衬底噪声耦合效应  

Substrate Noise Coupling Effect in Mixed Signal SoC

作　　者：吴晓鹏[1] 杨银堂[1] 朱樟明[1] 

机构地区：[1]西安电子科技大学微电子所宽禁带半导体材料与器件教育部重点实验室,陕西西安710071

出　　处：《现代电子技术》2006年第8期118-122,共5页Modern Electronics Technique

基　　金：国家自然科学基金资助项目(6047G046);国防重点实验室资助项目(51433030103D20101)

摘　　要：衬底噪声耦合是深亚微米混合信号集成电路中常见的噪声干扰效应,严重地影响了模拟电路的性能。系统地阐述混合信号SoC中的衬底噪声耦合效应及其研究现状,讨论利用基于格林方程的边界元法对衬底建模的方法,并且分别从工艺、版图、电路等不同层次衬底噪声耦合效应的抑制方法与技术,同时对将来衬底噪声研究的发展方向以及新思路进行分析与讨论。Substrate noise coupling effect often occurs in the DSM mixed signal ICs, which seriously interferes the normal pedormance of the analog circuits. The substrate noise coupling effect in mixed signal SoC and its research state of the art is illustrated in this paper. The BEM method of substrate modeling which is based on the Green＇s function is discussed,and the noise reduction techniques of different levels are presented. The research direction in future is also discussed.

关 键 词：混合信号 村底噪声 建模方法 EEACC 2550X 2570A 

分 类 号：TN43[电子电信—微电子学与固体电子学]