RBR控制在超大规模集成电路制造的化学机械抛光工艺中的应用  

RBR control applied on chemical-mechanical polishing process in ULSI manufacturing

作　　者：李秀娟[1] 金洙吉[2] 康仁科[2] 郭东明[2] 苏建修[2] 

机构地区：[1]知识产权学院华东政法学院,上海200042 [2]大连理工大学精密与特种加工教育部重点实验室,辽宁大连116024

出　　处：《金刚石与磨料磨具工程》2006年第2期61-64,共4页Diamond & Abrasives Engineering

基　　金：国家自然科学基金重大项目资助(50390061);国家杰出青年科学基金资助(50325518)

摘　　要：本论文介绍了RBR过程控制技术在超大规模集成电路(ULSI)制造中的化学机械抛光(CMP)这一关键工艺中的应用。CMP工艺中的RBR控制是利用CMP工艺后检测获得的抛光质量数据来调整下一片硅片抛光的输入工艺参数的方法实现的。由于影响CMP过程的参数比较多,并且存在一些复杂的变化过程(如抛光垫老化、更换抛光垫等),使得其RBR控制是一个多目标、多输入、多输出的控制过程。本文结合CMP工艺分析了RBR控制,并以双指数权重调整方法为例描述了用于CMP的RBR控制算法,最后介绍了RBR控制在CMP工艺应用中的最新研究结果。Chemical-mechanical polishing（CMP） process is the key important planarization process in ULSI manufacturing. The RBR control applied on the CMP process is introduced in this paper. The RBR control of CMP process adjusts its recipe primarily relying on the measurement of the post-polishing parameters. There are many parameters which can influence the CMP process, and there are ＇also some complex process （for example the wear-out of the pad, and the exchange of the pad）. So those make the RBR control of CMP process become a multi-object, multi-in-put and multi：out-put （ MOMIMO ） control process. Taking the double exponentially-weighted-moving-average method as an example, the control arithmetic is depicted. And the up to date research results are presented.

关 键 词：化学机械抛光 RBR控制 过程控制 

分 类 号：TG58[金属学及工艺—金属切削加工及机床]