ZnO掺杂Li^+陶瓷靶及溅射膜制备工艺研究  

The experimental investigation on preparation of Li-doped ZnO ceramic targets and sputtering thin films

作　　者：陈祝[1] 张树人[1] 杜善义[2] 杨成韬[1] 孙明霞[1] 郑泽渔[1] 李波[1] 董加和[1] 

机构地区：[1]电子科技大学微电子与固体电子学院,四川成都610054 [2]哈尔滨工业大学复合材料研究所,黑龙江哈尔滨150001

出　　处：《功能材料》2006年第4期583-586,590,共5页Journal of Functional Materials

基　　金：国家重点基础研究发展计划(973计划)资助项目(5130Z02)

摘　　要：利用固相反应成功地制备了直径为70mm,厚度为10~15mm的掺杂Li离子ZnO陶瓷靶材。研究了不同摩尔浓度的Li离子掺杂靶材,并对其绝缘电阻与损耗进行了分析比较,最终确定Li离子的最佳掺杂量为2.2l%(摩尔分数)。同时通过在不同温度烧结试验、不同成型压力试验确定了ZnO靶材制备的最佳工艺,并通过所制备的ZnO-Li0.022陶瓷靶,采用RF射频磁控溅射技术在Si(100)、玻璃(载玻片)、及Pt(111)/Ti/SiO2/Si(100)基片上制备出高度c轴(002)择优取向、均匀、致密的ZnO薄膜。We have successfully prepared high quality Li-doped ZnO ceramic targets with 70mm in diameter and 10-15mm in thicknesss by solid-state reaction. This paper studied the influence of concentration of Li2CO3 on the electrical properties of ZnO ceramic target. By comparing and analyzing the insulative resistivity （IR） and dielectric loss（tgδ）, the optimum concentration of Li^＋ doped in ZnO ceramic target was obtained （for 2.2 mol%）. And the optimum process for preparing ZnO ceramic target was also realized through the investigation of sintering temperatures and molding pressure. By using Li0. 022 -doped ZnO ceramic as the target, the ZnO films with highly c-axis （002） preferred orientation have been grown by RF magnetron sputtering on Si（100）,glass and Pt（111）/Ti/SiO2/Si（100） substrates respectively.

关 键 词：陶瓷靶 氧化锌薄膜 射频磁控溅射 择优取向 

分 类 号：N304.2[自然科学总论] TB43[一般工业技术]