应用于40Gb/s电吸收调制器的Al_2O_3高速热沉研究  

HIGH-SPEED Al_2O_3-BASED SUBMOUNT FOR 40Gb/s ELECTROABSORPTION MODULATORS

作　　者：田建柏[1] 熊兵[1] 王健[1] 蔡鹏飞[1] 孙长征[1] 罗毅[1] 

机构地区：[1]清华大学电子工程系集成光电子学国家重点实验室,北京100084

出　　处：《红外与毫米波学报》2006年第2期105-108,共4页Journal of Infrared and Millimeter Waves

基　　金：国家自然科学基金(60244001;60223001和60290084);"863"高技术计划(2001AA312190和2002AA31119Z);"973"重点国家基础研究(G2000-03-6601)资助项目

摘　　要：设计制作了面向40Gb／s电吸收调制器（EAM）的高速微波过渡热沉，并进行了EAM管芯级封装测试的验证．这种基于氧化铝（Al2O3）的热沉采用共面波导（CPW）传输线以实现低损耗微波传送，以及Ta2N薄膜电阻用于EAM的阻抗匹配，采用Ti／Cu／Ni／Au金属材料作为CPW传输线电极材料，从而保证CPW传输线与Ta2N电阻材料之间良好的电接触，使热沉的典型反射系数在0—40GHz范围内均达到优于-21dB的水平．作为验证，采用该种热沉用于高速EAM的管芯级封装，测试得到小信号调制响应带宽超过40GHz．A high-speed submount was designed and fabricated for 40 Gb/s electroabsorption modulators （EAMs）, and characterized in the chip-level packaging and testing of an EAM device. The Al2O3-based submount contains a coplanar waveguide （CPW） for microwave signal feeding and a Ta2 N thin-film resistor for impedance matching of EA modulator. Ti/ Cu/Ni/Au metal is introduced as the CPW electrode material, and good contact with Ta2 N thin-film is guaranteed accordingly. Therefore, the typical reflection coefficient of the submount is reduced to be lower than - 21 dB up to 40 GHz. As a demonstration, a high-speed EA modulator was packaged by using the high-speed submount, and the small-signal modulation bandwidth was measured to be over 40 GHz.

关 键 词：高速热沉 电吸收调制器 共面波导传输线 薄膜电阻 阻抗匹配 

分 类 号：TN36[电子电信—物理电子学] TN81