高浓度离子注入砷隐埋层技术  

Technique of As Buried-Layer Doped By High Density Ion Implant

作　　者：樊崇德[1] 陆剑侠[1] 张沈军[1] 陶星 袁凯[1] 

机构地区：[1]电子工业部东北微电子研究所,沈阳110032

出　　处：《微处理机》1996年第2期22-24,共3页Microprocessors

摘　　要：高浓度离子注入砷隐埋层技术与扩散锑埋层技术相比，具有表面浓度高，硅表面无合金点等优点。应用该技术成功地研制了具有国际先进水平的“DYL多元逻辑八位高速机频D／A转换器”集成电路。A technique of As buried-layer doped by high density ion implant is presented in this paper. Compared with Sb burried-layer,this method have some advantage, such as high surface density,no alloy - dot etc. Used by this method,an international advanced integrated circuit-'DYL muitiple -unit 8 - bit high speed visual frequency D/A convertor is successfully fabricated.

关 键 词：离子注入 隐埋层 双极型集成电路 砷 集成电路 

分 类 号：TN431.05[电子电信—微电子学与固体电子学]