直流磁控溅射陶瓷靶制备ITO薄膜及性能研究  

Study on Optical and Electrical Properties of ITO Thin Films Deposited by DC Reactive Magnetron Sputtering

作　　者：夏冬林[1] 杨晟[1] 王树林[1] 赵修建[1] 

机构地区：[1]武汉理工大学硅酸盐材料工程教育部重点实验室,武汉430070

出　　处：《人工晶体学报》2006年第2期272-275,232,共5页Journal of Synthetic Crystals

基　　金：武汉理工大学校基金(No.2003XJJ025)资助项目

摘　　要：以10%质量分数SnO2和90%质量分数In2O3烧结成的ITO氧化物陶瓷为靶材,采用直流磁控反应溅射法在玻璃基片上制备ITO透明导电薄膜,研究了基片温度和氧分压条件对ITO薄膜的物相结构和光电性能的影响。实验结果表明:ITO薄膜的方块电阻随衬底温度的升高而下降,而可见光透过率增大;ITO薄膜可见光透过率和方块电阻随氧分压的增加而增大。Tin-doped indium oxide （ITO）thin films were deposited on glass substrates by DC reactive magnetron sputtering using ITO sintered as the target with 10 wt% SnO2 and 90 wt% In2O3. The effects of substrate temperatures and oxygen partial pressures on the electrical and optical properties of ITO thin films were investigated. The results indicate that the sheet resistance of ITO thin films decreases with increasing substrate temperatures while the transmittance increases with substrate temperatures. The transmittance and sheet resistance of ITO thin films increase with increasing oxygen partial pressures.

关 键 词：直流磁控溅射 ITO薄膜 衬底温度 透过率 

分 类 号：TN304[电子电信—物理电子学]