快速退火对PZT铁电薄膜结构的影响  

Influence of Rapid Thermal Process on Structure of PZT Ferroelectric Thin Film

作　　者：李振豪[1] 王忠华[1] 李琳[1] 普朝光[1] 杨培志[1] 

机构地区：[1]昆明物理研究所,昆明650223

出　　处：《人工晶体学报》2006年第2期415-419,共5页Journal of Synthetic Crystals

基　　金：云南省自然科学基金重点项目(No.2002C0008Z)资助

摘　　要：采用射频磁控溅射方法在Pt/Ti/S iO2/S i衬底上制备出(PZT)铁电薄膜,在550℃、600℃、650℃、700℃几个温度下对薄膜进行了快速退火热处理,并在退火处理后用X射线衍射、原子力显微镜和热释电系数测试系统研究了PZT铁电薄膜的薄膜结构、表面形貌及热释电性能。在650℃快速退火后,PZT铁电薄膜已经形成较好的钙钛矿相结构,并获得了较好的热释电性能,热释电系数达到1.5×10-8C.cm-2.k-1。Lead zirconate titanate （PZT） ferroelectric thin films were prepared on Pt/Ti/SiO2/Si substrates by RF magnetron sputtering. Membrane structure and morphology of the PZT ferroelectric thin films were investigated by X-ray diffraction（XRD） and atomic force microscopy （AFM） after annealed at 550℃ ,600℃, 650℃ and 700℃ by rapid thermal process （RTP）. The pyroelectric coefficients were measured by a patented technique. The PZT thin film showed a pure perovskite structure and a good pyroelectric property after annealed at 650℃C. The pyroelectric coefficient of the thin film is 1.5 × 10^-8 C·cm^-2·k^-1.

关 键 词：锆钛酸铅 铁电薄膜 快速退火 X射线衍射 原子力显微镜 

分 类 号：O484[理学—固体物理]