808nm激光器端面镀膜技术  

Plating Film on Facets of 808nm Semiconductor Laser

作　　者：唐婷婷[1] 王锐[1] 刘刚明[2] 廖柯[2] 

机构地区：[1]重庆邮电大学光电工程学院,重庆400065 [2]重庆光电技术研究所,重庆400060

出　　处：《半导体光电》2006年第2期167-169,共3页Semiconductor Optoelectronics

摘　　要：通过对AlGaAs/GaAs 808 nm半导体激光器谐振腔的前后端面分别蒸镀Ta2O5/SiO2膜系高反膜和Al2O3单层增透膜,使得前后端面的反射率分别达到11%和98.42%。器件在同一驱动电流下镀膜后的输出功率比镀膜前增加了一倍多,同时镀膜还有效地保护了端面,延长了器件工作寿命。Through evaporating Ta2O5/SiO2 high reflecting film and Al2O3 anti-reflective coating on the front and back cavity surfaces of AlGaAs/GaAs 808 nm LD, the reflectivities of 11% and 98.42% are achieved respectively. The output power after plating the film could be two times more than before plating the film when it is working at the same driving current. At the same time the film makes the facets protected effectively and also the device lifetime enhanced.

关 键 词：高反膜 增透膜 反射率 输出功率 

分 类 号：TN248.4[电子电信—物理电子学]