氮化工艺对GaN缓冲层生长的影响  

Influence of Nitriding Technology on Growth of GaN Buffer

作　　者：孙万峰[1] 顾彪[1] 徐茵[1] 秦福文[1] 马世猛[1] 

机构地区：[1]大连理工大学三束材料表面改性国家重点实验室,辽宁大连116024

出　　处：《半导体光电》2006年第2期170-173,共4页Semiconductor Optoelectronics

基　　金：国家自然科学基金资助项目(60476008)

摘　　要：以氮等离子体为氮源,以三乙基镓(TEG)为镓源,在蓝宝石(Al2O3)衬底上生长GaN缓冲层。主要考察了氮化温度和氮气流量对缓冲层生长的影响。实验中采用了氢氮混合等离子体清洗的方法,提高了清洗的质量。用X射线衍射来表征晶体的结构,用原子力显微镜来表征表面形貌。通过对高能电子衍射仪获得的缓冲层与氮化层的衍射图样进行比较,对GaN的氮化实验参数进行了优化。GaN buffer layers have been deposited on sapphire substrates with a nitrogen plasma as a nitrogen source and TEG as a Ga source. The influence of nitridation temperature and nitrogen flow rate on the growth of buffer layers is emphasized. A better result is got when cleaning sapphire by the plasma of hydrogen mixed with nitrogen. The crystal structure is characterized by X-ray diffraction （XRD） and the morphological characterizations are observed by atomic force microscopy （AFM）. The growth parameters are optimized through comparing RHEED images of buffers and nitridation layers.

关 键 词：GAN 氮化 缓冲层 ECR—PEMOCVD 

分 类 号：TN312.8[电子电信—物理电子学]