MWECR-CVD法高速沉积氢化非晶硅薄膜  

High rate deposition of hydrogenated amorphous silicon thin film with MWECR-CVD system

作　　者：刘国汉[1] 丁毅[1] 何斌[2] 朱秀红[2] 陈光华[1] 贺德衍[1] 

机构地区：[1]兰州大学物理科学与技术学院 [2]北京工业大学材料学院,北京100022

出　　处：《兰州大学学报（自然科学版）》2006年第2期43-46,共4页Journal of Lanzhou University(Natural Sciences)

基　　金：国家重点基础研究发展规划资助项目(G000028201)。

摘　　要：介绍了一种新型的 MWECR-CVD 装置．该装置设计采用了一种由单个电磁线圈和永磁体单元组合的新型磁场,设计了一种新型的矩形耦合波导．应用这一装置使 a-Si∶H 薄膜的沉积速率达到了 2nm／s 以上．为了降低薄膜的光致衰退效应,提出了热丝辅助的 MWECR-CVD,这一改进可以大大降低薄膜的氢含量,改善薄膜的光照稳定性．In this paper is reported a new MWECR-CVD system, in which a novel magnetic field combination of a permanent magnet unit and a single electromagnetic coil was used, and a new rectangle coupling wave-guide was also designed. By using this new MWECR-CVD system, the deposition rate of a-Si： H films was up to 2 nm/s. Meanwhile, in order to reduce the S-W effect of the films, a hot-wire-assisted microwave electron-cyclotron-resonance chemical vapor deposition system （HW-MWECR-CVD） was developed and, with it, hydrogen concentration was decreased dramatically and the film stability was improved remarkably.

关 键 词：微波电子回旋共振化学气相沉积 氢化非晶硅薄膜 磁场 微波 热丝 

分 类 号：O484[理学—固体物理]