碲镉汞阳极氧化层的化学结构分析  

Chemical structure of HgCdTe-anodic oxide

作　　者：王平[1] 朱龙源[1] 李向阳[1] 龚海梅[1] 

机构地区：[1]中国科学院上海技术物理研究所传感技术国家重点实验室

出　　处：《红外与激光工程》2006年第2期208-211,共4页Infrared and Laser Engineering

基　　金：上海市科学技术委员会资助项目(01QA14045)

摘　　要：碲镉汞(MCT)由于其特殊的禁带宽度,成为一种重要的红外探测器半导体材料。其表面复合中心会严重影响探测器性能,为了减少复合中心及保持电学和化学稳定性,表面钝化成为必不可少的工艺步骤。根据碲、镉、汞3种元素在碱性溶液中的电极电势,计算得出阳极氧化的先后顺序为Cd>Te>Hg,并以其构建了一种氧化过程模型,模拟溶液中负电荷离子渗入材料和材料内部各种离子的位置及价态变化,推导出组成结构,与XPS化学组分分析结果十分吻合。在结构方面,该模型成功解释了缺Hg区、富Cd区和富Te区的存在及其位置,并通过俄歇电子能谱(AES)测试得到了验证,说明模型具有一定的合理性。HgCdTe（MCT） is a compound semiconductor with great potential for infrared detector applications,because of its bandgap.The MCT surface provides sites for generation-recombination centers. These, in turn severely limit the performance of the infrared detector. Consequently, it is necessary to passivate the MCT surface in order to reduce these surface leakage currents as well as to maintain electrical and chemical stability. Owing to the difference of the different elements＇electrode voltage in a basic solution,the oxidation order is Cd〉Te〉Hg.Afterwards,an oxidation model of HgCdTe-anodic oxide is found.The model simulates the movement of different types of ions and determines their composition and structure.The results are very similar to the outcomes described by other papers.Combined with the result of AES analysis, the model explains Hg-lacked,Cd-riched and Te-riched successfully,validating the rationality of the model.

关 键 词：碲镉汞 电极电势 俄歇电子能谱 

分 类 号：TN305.5[电子电信—物理电子学]