ULSI化学机械抛光(CMP)材料去除机制模型  

Material Removal Mechanism and Model on Chemical Mechanical Polishing in ULSI

作　　者：钟旻[1] 张楷亮[1] 宋志棠[1] 封松林[1] 

机构地区：[1]中国科学院上海微系统与信息技术研究所纳米技术研究室半导体功能薄膜工程技术研究中心,上海200050

出　　处：《润滑与密封》2006年第5期170-173,共4页Lubrication Engineering

基　　金：中国博士后基金(2005037522);中国科学院王宽诚博士后工作奖励基金资助项目(20040916094306);上海市博士后基金(05R214156);上海-应用材料科技合作共同计划(AM基金0414);上海市纳米专项(05nm05043);中国科学院资助项目(Y2005027);上海市科委项目(0452nm012;04DZ05612;04ZR14154;04JC14080;05JC14076;AM0517)资助

摘　　要：CMP已成为IC制造中的关键工艺之一,相关机制模型的研究是当前CMP的热点。综述了考虑抛光液的流动、抛光垫的弹性和硬度、研磨颗粒的大小和硬度等不同因素的机制模型,并对基于不同假设的模型作了分析和比较。最后对CMP模型未来的发展和研究方向提出了展望。Chemical mechanical polishing（CMP） is one of the most important processes in IC fabrication. The mechanism model is the hotspot in CMP research in current status. A survey of some models was given which describe specific aspects of CMP, such as the flow of the slurry or the bending and hardness of the polishing pad or abrasive size and hardness. The different assumptions of the models were investigated and the models were compared. CMP models and its key problems about CMP in the future were prospected.

关 键 词：化学机械抛光 平坦化 材料去除机制 模型 集成电路 

分 类 号：TH117.1[机械工程—机械设计及理论]