Si/SiO_2系统的总剂量辐射损伤及辐射感生界面态的能级分布  

The Si/SiO_(2)system's damage and energy band distribution of interface states induced by total dose radiation

作　　者：余学峰[1] 张国强[1] 艾尔肯[1] 郭旗[1] 陆妩[1] 任迪远[1] 

机构地区：[1]中国科学院新疆理化技术研究所,新疆乌鲁木齐830011

出　　处：《核电子学与探测技术》2006年第3期328-330,共3页Nuclear Electronics & Detection Technology

摘　　要：对比了目前常用的三种用54HC电路制作工艺制作的MOS电容的总剂量辐射实验结果,并从微观氧化物电荷、界面态的感生变化及其界面态的能量分布变化等角度,研究了在不同制作工艺条件下,54HC电路Si/SiO2系统总剂量辐射损伤特性。Responses of three kinds of MOS capacitors to the total dose radiation have been compared and studied. The characteristic and mechanism of the radiation inducing damage in the Si/SiO2 system were explored from the view of the generation of the oxide charges and interface states, and, especially, the change of the energy band of interface states.

关 键 词：MOS电容 氧化物电荷 界面态 能级分布 

分 类 号：TM53[电气工程—电器]