过量PbO对PLZT（14／0／100）薄膜结构和性能的影响  

Influence of PbO on the Structure and Properties of PLZT(14/0/100) Thin Films

作　　者：傅焰峰[1] 李佐宜[1] 林更琪 卢德新[1] 

机构地区：[1]华中理工大学固体电子学系

出　　处：《人工晶体学报》1996年第2期159-163,共5页Journal of Synthetic Crystals

摘　　要：采用Ｘ射线结构分析方法，对磁控溅射法制备的含过量ＰｂＯ的ＰＬＺＴ（１４／０／１００）薄膜在退火过程中的晶化行为进行了研究。结果表明，薄膜中过量的ＰｂＯ具有促进钙钛矿结构形成，降低晶化温度，并且抑制焦绿石相生长的作用。铁电性能测试结果表明，ＰｂＯ的过量能改善铁电薄膜的耐击穿性，但过量太多的ＰｂＯ会导致薄膜铁电性能变坏。The ferroelectric PLZT (14/0/100) thin films with different excess Pb0 content have been prepared by rf magnetron sputtering. The structures of annealed films were determined by X - raydiffraction method .The results show that the Pb0 excess plays an important role in the formation and growth of perovskite phase, while depresses the formation of pyrochlore phase.The ferroelctrin hysteresis characteristics measurement shows that the proper Pb0 excess can improve the properties of these films.

关 键 词：铁电薄膜 磁控溅射法 钙钛矿相 

分 类 号：TM277.06[一般工业技术—材料科学与工程]