光激电流法测量掺锗CZSi中的深能级  

Deep Levels in CZSi Doped with Germanium Determined by Light Execited Current

作　　者：张维连[1] 闫书霞[1] 冀志江[2] 

机构地区：[1]河北工业大学材料研究中心 [2]河北建筑工程学院

出　　处：《人工晶体学报》1996年第3期266-267,共2页Journal of Synthetic Crystals

摘　　要：用光激电流法研究了Ｇｅ作为杂质掺入到Ｓｉ中可能引入的深能级，发现掺锗量小于或等于１．０ｗｔ％（重量比）时，不会在ＣＺＳｉ中引入与锗有关的深能级；锗的引入降低了硅中点缺陷的浓度。Deep levels in CZSi doped with germanium are studied with light excited current.Concentration of the deep levels of some point defects in CZSi doped with Ge is lower than that of CZSi undoped with Ge,and deep levels related to Ge are not discovered in CZSi doped with germanium which is less than or as much as 1.0wt %.

关 键 词：等电子掺杂 深能级 光激电流法 掺锗 硅晶体 

分 类 号：O743.1[理学—晶体学]