双面抛光工艺中压力对300mm硅片表面形貌的影响  

Effect of Pressure on Surface Morphology of 300 mm Silicon Wafers during Double-Side Polishing

作　　者：库黎明[1] 李耀东[1] 周旗钢[1] 王敬[1] 

机构地区：[1]北京有色金属研究总院有研半导体材料股份有限公司,北京100088

出　　处：《稀有金属》2006年第2期134-137,共4页Chinese Journal of Rare Metals

基　　金：国家"863"十五重大专项项目支持(2002AA3Z1110)

摘　　要：利用非接触式光学轮廓仪研究了双面抛光过程中不同压力下300mm硅片表面形貌的变化,并通过Stribeck曲线进行了探讨。结果表明,双面抛光过程中机械作用的强度随着压力的变化而不同,从而影响抛光后的硅片表面形貌。当硅片表面与抛光垫之间的接触处于固-液混合接触区时,协调机械去除作用与化学腐蚀作用之间的关系,使之达到平衡,可以显著地降低硅片表面的微粗糙度和峰谷值。In order to optimize the chemical mechanical polishing process of large size silicon wafers, the surface morphology of 300 mm silicon wafers polished under different pressure was studied by non-contact profiler. It is shown that a change of pressure would result in a difference on the surface morphology. By analyzing the Stribeck curve, it is assumed that the pressure would affect the contacting mode between the silicon wafer and the ness Our side including RMS ndings will be pad, and hence the microrough and the peak-to-valley value）. helpful to optimizing the doublepolishing processing parameters

关 键 词：硅片 双面抛光 非接触式光学轮廓仪 表面形貌 

分 类 号：TN304.12[电子电信—物理电子学]