离子束增强沉积Si─N膜  

ION BEAM ENHANCED DEPOSITION OF Si N THIN FILMS

作　　者：罗广南[1,2] 李文治[1,2] 李恒德 

机构地区：[1]广州有色金属研究院新材料室 [2]清华大学材料科学与工程系

出　　处：《中国有色金属学报》1996年第3期115-118,共4页The Chinese Journal of Nonferrous Metals

摘　　要：用离子束增强沉积方法制备了ＳｉＮ薄膜，其中Ｓｉ由一束Ａｒ离子从Ｓｉ靶上溅射下来，在溅射沉积的同时，以一束Ｎ离子轰击正在沉积的膜层，于是获得了ＳｉＮ膜。采用卢瑟福背散射、红外光谱和透射电镜对膜层的成分和结构进行了分析，结果表明：膜面平整，膜层为非晶或微晶结构。Ion beam enhanced deposition of Si N thin films was studied. Si N thin films were formed by simultaneous bombardment of nitrogen ion beam during sputter deposition of silicon by an argon ion beam. The composition and the structure of the films were analyzed by means of RBS, IR and TEM. The smooth films with microcrystalline or amorphous structure consisted of Si and stoichiometric β Si 3N 4.

关 键 词：离子束增强沉积 氮化硅膜 薄膜 

分 类 号：TN304.055[电子电信—物理电子学]