反应离子刻蚀加工工艺技术的研究  

Study of Reaction Ion Etching Processing Technique

作　　者：来五星[1] 廖广兰[1] 史铁林[1] 杨叔子[1] 

机构地区：[1]华中科技大学机械学院机电系,武汉430074

出　　处：《半导体技术》2006年第6期414-417,共4页Semiconductor Technology

基　　金：国家自然科学基金项目(50405033;50575078)

摘　　要：反应离子刻蚀(RIE)选择性比较低,只能进行各向异性刻蚀,刻蚀特征尺寸小于3μm,无危险化学试剂,但有危险气体和射频功率等安全风险。介绍了反应离子刻蚀技术的基本原理,探讨了聚酰亚胺、氮化硅、二氧化硅、铝和多晶硅薄膜材料刻蚀的工艺处方,研究了RIE草地现象形成机理,给出了避免草地现象的工艺措施。The selective of reaction ion etching （RIE） is lower, so it is only used for anisotropic etching. The feature line width is below 3μm, the processing has no dangerous chemical reagent, but has dangerous gas and risk of plasma power. The basic principle of RIE, and processing recipes of silicon nitride, silicon dioxide, aluminum and polysilicon were discussed, the RIE grass was studied, and the processing method how to eliminate the grass was given.

关 键 词：微机电系统 工艺 反应离子刻蚀 

分 类 号：TN305.7[电子电信—物理电子学]