SOI MOSFET Model Parameter Extraction via a Compound Genetic Algorithm  

基于混合遗传算法的SOI MOSFET模型参数提取(英文)

作　　者：李瑞贞[1] 李多力[1] 杜寰[1] 海潮和[1] 韩郑生[1] 

机构地区：[1]中国科学院微电子研究所,北京100029

出　　处：《Journal of Semiconductors》2006年第5期796-803,共8页半导体学报（英文版）

摘　　要：We improve the genetic algorithm by combining it with a simulated annealing algorithm. The improved algorithm is used to extract model parameters of SOI MOSFETs, which are fabricated with standard 1.2μm CMOS/SOI technology developed by the Institute of Microelectronics of the Chinese Academy of Sciences. The simulation results using this model are in excellent agreement with experimental results. The precision is improved noticeably compared to commercial software. This method requires neither a deeper understanding of SOl MOSFETs model nor more complex computations than conventional algorithms used by commercial software. Comprehensive verification shows that this model is applicable to a very large range of device sizes.通过将遗传算法和模拟退火算法相结合得到了改进的遗传算法,这种改进的遗传算法可用于提取SOIMOSFET模型参数.用这种方法提取了基于中国科学院微电子研究所开发的标准的1·2μm CMOS/SOI工艺的SOI MOSFET模型参数,用此模型模拟的数据与测试数据吻合很好,与商业软件相比精度得到了明显的提高.这种方法与商业软件使用的传统的方法相比,不需要对SOI MOSFET模型有非常深入的了解,也不需要复杂的计算.更深入的验证表明,该模型适用的器件尺寸范围很广.

关 键 词：SOI parameter extraction genetic algorithm simulated annealing algorithm 

分 类 号：TN432[电子电信—微电子学与固体电子学]