HfO_2高k栅介质等效氧化层厚度的提取  

Extraction of Equivalent Oxide Thickness for HfO_2 High k Gate Dielectrics

作　　者：陈勇[1] 赵建明[1] 韩德栋[2] 康晋锋[2] 韩汝琦[2] 

机构地区：[1]电子科技大学微电子与固体电子学院,成都610054 [2]北京大学微电子系,北京100871

出　　处：《Journal of Semiconductors》2006年第5期852-856,共5页半导体学报（英文版）

基　　金：国防预研基金资助项目(批准号:51412010103DZ0215)~~

摘　　要：分两步提取了HfO2高k栅介质等效氧化层厚度(EOT).首先,根据MIS测试结构等效电路,采用双频C-V特性测试技术对漏电流和衬底电阻的影响进行修正,得出HfO2高k栅介质的准确C-V特性.其次,给出了一种利用平带电容提取高k介质EOT的方法,该方法能克服量子效应所产生的反型层或积累层电容的影响.采用该两步法提取的HfO2高k栅介质EOT与包含量子修正的Poisson方程数值模拟结果对比,误差小于5%,验证了该方法的正确性.The equivalent oxide thickness （EOT） of an HfO2 high κ dielectric is extracted in two steps. First,a dual-frequency technique is employed for the C-V curve to overcome the effects of leakage current and substrate resistance. Second,an approach using flat-band capacitance is demonstrated for extracting the EOT of a high κ dielectric, without the effects of inversion or accumulation capacitance. The relative error between the EOT extracted by this two-step approach and by the quantum corrected Poisson equation is less than 5%, thus validating the approach.

关 键 词：高介电常数栅介质 等效氧化层厚度 二氧化铪 

分 类 号：TN386[电子电信—物理电子学]