局域寿命控制NPT-IGBTs稳态模型  

A Static-State Model of NPT-IGBTs with Localized Lifetime Control

作　　者：方健[1] 蒋华平[1] 乔明[1] 张波[1] 李肇基[1] 

机构地区：[1]电子科技大学微电子与固体电子学院,成都610054

出　　处：《Journal of Semiconductors》2006年第5期857-863,共7页半导体学报（英文版）

基　　金：国家军事电子预研基金(批准号:41308020405)武器装备预研基金(批准号:51408030404DZ0215)资助项目~~

摘　　要：提出了局域寿命控制下的NPT-IGBT稳态模型.通过与二维器件数值仿真比较,表明模型结果和仿真结果能较好地吻合.基于该模型,详细地分析了局域寿命区的参数对器件正向特性的影响.通过对基区空穴浓度的分析,澄清了长期以来对于最优局域低寿命区位置的不同看法,将各种结论统一起来.A static-state model of NPT-IGBTs with localized lifetime control is proposed,the results of which fit 2D simulation. With this model, the forward characteristics of localized lifetime control NPT-IGBT influenced by the parameters of localized low-lifetime region are discussed in detail. We also systematically explain why the optimized locations of low-lifetime region are different by different localized lifetime control methods in previous reports.

关 键 词：局域寿命控制 NPT-IGBT正向压降 电导调制 

分 类 号：TN322.8[电子电信—物理电子学]