模拟集成电路仿真中的UDSM MOSFET建模  

UDSM MOSFET Modeling for Simulation of Analog Integrated Circuits

作　　者：段成华[1] 柳美莲[1] 

机构地区：[1]中国科学院研究生院信息科学与工程学院中国科学院研究生院电子学研究所,北京100049

出　　处：《微电子学》2006年第3期320-325,共6页Microelectronics

基　　金：国家高技术研究发展(863)计划资助项目(2002AA141041)

摘　　要：对MOSFET器件特性、MOSFET建模方法和建模发展历程进行了回顾,重点分析了在模拟集成电路设计中较为流行的几种模型:BSIM3、EKV和SP2001模型,对其各自的优缺点进行了比较。结果表明,获得能够精确地预测高性能模拟系统的模型是很困难的;几种模型中,EKV模型在模拟集成电路的低功耗设计中具有一定的优势。Characteristics of MOSFET＇s and its modeling methods and developments are reviewed. Three popular MOSFET models （BSIM3,EKV and SP2001） in analog integrated circuit design are analyzed. Comparisons between these models are made for their advantages and disadvantages. It has been shown that it is very difficult to obtain a model which can accurately predict the operation of high-performance analog systems; and among these models, the EKV model has some advantages in designing low power analog integrated circuits.

关 键 词：模拟集成电路 MOSFET建模 BSIM3模型 SP2001模型 EKV模型 

分 类 号：TN386.1[电子电信—物理电子学]