渐变掩蔽图形超低压选择区域生长法制备高质量InGaAsP多量子阱材料  

High-quality multiple quantum wells selectively grown on taper-patterned substrates by ultra-low-pressure MOCVD

作　　者：赵谦[1] 潘教青[1] 张靖[1] 周帆[1] 王宝军[1] 王鲁峰[1] 边静[1] 安欣[1] 赵玲娟[1] 王圩[1] 

机构地区：[1]中国科学院半导体研究所国家光电子工艺中心,北京100083

出　　处：《物理学报》2006年第6期2982-2985,共4页Acta Physica Sinica

基　　金：国家"973"计划(批准号:G2000068301);国家"863"计划(批准号:2002AA312150);国家自然科学基金项目(批准号:90101023;60176023;60476009)资助的课题~~

摘　　要：采用超低压(22mbar)选择区域生长(Selective Area Growth,SAG)金属有机化学汽相沉积(Metal-organic ChemicalVapor Deposition,MOCVD)技术成功制备了高质量InGaAsP/InGaAsP多量子阱(Multiple Quantum Well,MQW)材料.在较小的掩蔽宽度变化范围内(15—30μm),得到了46nm的光荧光(Photoluminescence,PL)波长偏移量,PL半高宽(Full-Width-at-Half-Maximum,FWHM)小于30meV.为了保证选择区域内的MQWs材料的均匀性,我们采用了新型的渐变掩蔽图形,并且运用这种新型渐变掩蔽图形,研究了渐变区域的过渡效应对材料生长的影响.我们还观察到,渐变区域的能量偏调量随着掩蔽图形宽度与渐变区域长度比值的增大而出现饱和现象.High quality InGaAsP/InGaAsP multiple quantum wells （MQWs） have been selectively grown by ultra-low-pressure （22 mbar）metal-organic chemical vapor deposition. A large bandgap energy shift of 46 nm and photoluminescence with FWHM less than 30 meV were obtained with a rather small mask width variation （ 15-30 μm）. In order to study the uniformity of the MQWs grown in the selective area, novel tapered masks were employed, and the transition effect of the tapered region was also studied. The energy detuning of the tapered region was observed to be saturated at larger ratios of the mask width to the tapered region length.

关 键 词：超低压 选择区域生长 渐变掩蔽图形 

分 类 号：TN304.05[电子电信—物理电子学]