GaAs／Ge的MOCVD生长研究  

INVESTIGATION OF MOCVD GROWTH OF GaAs ON Ge SUBSTRATE

作　　者：高鸿楷[1] 赵星[1] 何益民[1] 杨青[1] 朱李安[1] 

机构地区：[1]中国科学院西安光学精密机械研究所

出　　处：《光子学报》1996年第6期518-521,共4页Acta Photonica Sinica

摘　　要：用常压ＭＯＣＶＤ在Ｇｅ衬底上外延生长了ＧａＡｓ单晶层，研究了ＧａＡｓ和６ｅ的极性与非极性材料异质外延生长，获得了质量优良的ＧａＡｓ／Ｇｅ外延片，ＧａＡｓ外延层Ｘ射线双晶衍射回摆曲线半高宽达１６弧秒。１０Ｋ下ＰＬ谱半峰宽为７ｍｅＶ．讨论了极性与非极性外延的界面反相畴问题和ＧａＡｓ－Ｇｅ界面的Ｇａ、Ｇｅ原子互扩散问题。GaAs epilayer on Ge substrate were obtained in a self-made atmospheric pressure MOCVDsystem. Growth technique of polar compound GaAs on non-polar Ge substrate have been studied.TheGaAs epilayer on Ge were measured by X-ray double-crystal diffractometry,the half-width of the peakof the rocking curve of the GaAs epilayer were 16″(arcs).The half-width of the PL spectrum ofGaAs at 10 K is 7 meV. Antiphase domain problem and diffusion problem of Ga、Ge、As atom ofinterface between polar epilayer GaAs and non-polar Ge substrate were also investigated.

关 键 词：MOCVD 砷化镓 异质外延 

分 类 号：TN304.23[电子电信—物理电子学] TN304.054