发光多孔硅的表面氮钝化  

SURFACE PASSIVATION OF LIGHT-EMITTING POROUS SILICON BY NITRIDE

作　　者：李谷波[1] 张甫龙[2] 陈华杰[2] 范洪雷[2] 俞鸣人 侯晓远[2] 

机构地区：[1]四川工业学院物理实验室,成都611744 [2]复旦大学应用表面物理国家重点实验室,上海200433

出　　处：《物理学报》1996年第7期1232-1238,共7页Acta Physica Sinica

基　　金：国家自然科学基金;"863"高技术计划青年基金资助的课题

摘　　要：报道对多孔硅在NH_3气中进行快速热处理的结果。红外吸收谱表明,经处理样品的表面由Si(NH)_2和Si_3N_4所覆盖,电子自旋共振谱指出,经处理的样品有相当低的悬挂键密度,光荧光谱表明,经适当条件处理的样品的发光强度与未作处理样品相比仅略有降低,而且在大气中存放三个月基本不变,这些结果表明,氮化物可以在多孔硅表面形成优良的钝化膜,这对多孔硅的实际应用及理论研究都有一定意义。Porous silicon is treated in NH3 gas by rapid thermal annealing. FTIR spectra indicate that the surface of the sample is covered with Si(NH)2 and Si3N4 species. ESR signal shows that the sample has rather low density of dangling bonds. The photoluminescence intensity of the treated sample de-creases slightly compared to the sample without the treatment and is very stable while storing in at-mosphere. These results show that nitride can be an excellent passivation film on porous silicon and may be important to the practical applications.

关 键 词：发光 多孔硅 表面 氮钝化 

分 类 号：TN204[电子电信—物理电子学]