高可靠高亮度AlGaInP发光二极管  

Highly Reliability and Brightness AlGaInP Light-emitting Diodes

作　　者：田咏桃[1] 仉志华[2] 郭伟玲[3] 沈光地[3] 

机构地区：[1]中国石油大学(华东)物理科学与技术学院,山东东营257061 [2]中国石油大学(华东)信息与控制工程学院,山东东营257061 [3]北京工业大学北京市光电子技术实验室,北京100022

出　　处：《固体电子学研究与进展》2006年第2期205-208,共4页Research & Progress of SSE

基　　金：973计划(批准号:G20000683-02);市教委项目(KP0204200201);国家基金(60077004)的支持

摘　　要：分析了隧道再生双有源区A lG aInP发光二极管的工作原理,测试了不同注入电流下管芯的轴向光强,得到了轴向光强随注入电流的变化关系。20 mA注入电流条件下,发射峰值波长为620 nm的隧道再生双有源区A lG aInP发光二极管,透明封装成视角15°后平均轴向光强达到5.5 cd。对透明封装成15°隧道再生双有源区发光二极管进行了寿命实验,在温度为25°C、30 mA直流电流条件下,隧道再生双有源区A lG aInP发光二极管的寿命超过了1.2×105h。The operating principal of tunneling-regenerated-double-active-region （TRDAR） AlGaInP light-emitting diodes is analyzed on-axis luminous intensity is tested under different injected current and the relationship between on-axis luminous intensity and injected current is offeted in this paper. The emitting peak wavelength of TRDAR AIGalnP light-emitting diodes is 620 nm at 20 mA. The average on-axis luminous intensity of TRDAR AlGaInP light-emitting diodes lamps with 15° viewing angle is 5.5 cd. Its life test is carried, and the lifetime of TRDAR AlGaInP light-emitting diodes has exceeded 1.2 × 10^5 hours under conditions of 30 mA direct current and 25℃ ambient temperature.

关 键 词：铝镓铟磷 发光二极管 隧道结 可靠性 

分 类 号：TN313[电子电信—物理电子学]