基于二维扩散方程的牺牲层腐蚀模拟与仿真  

Simulation of Sacrificial Layer Etching Based on 2-D Diffusion Equation

作　　者：李艳辉[1] 李伟华[1] 周再发[1] 

机构地区：[1]东南大学MEMS教育部重点实验室,南京210096

出　　处：《固体电子学研究与进展》2006年第2期269-272,278,共5页Research & Progress of SSE

基　　金：国家杰出青年科学基金资助课题(50325519)

摘　　要：深入研究了牺牲层腐蚀机制,给出了可以在二维平面中模拟腐蚀过程的仿真程序。由于腐蚀主要由腐蚀溶液的扩散机制所影响,对溶液的二维扩散方程给出了求解的有限差分算法,得到了在具体时间和位置的浓度,再利用T opography模型计算腐蚀前端面的腐蚀进行情况得到腐蚀前端行进的轮廓线,通过编程得到了能够模拟不同开口牺牲层结构的仿真程序。最后给出模拟结果和实验腐蚀结果的对比。A program is presented to simulate sacrificial layer etching in 2-D plane through deeply studying the mechanism of sacrificial layer etching. As the etching is mainly affected by diffusion, numerical algorithm of finite-difference method is given to solve the 2-D diffusion equation and get the value of the concentration at every site at the corresponding time. Then the topography model is used to compute the etching state to determine the etch contour at the front. The simulation program that can simulate the sacrificial structure with different opens is carried out. Contrasts to the experiment results is presented in the end.

关 键 词：牺牲层腐蚀 二维扩散方程 求解算法 Topography模型 

分 类 号：TN405[电子电信—微电子学与固体电子学]