具有渐变层半导体DBR的MOCVD外延制备  

MOCVD grown DBR with graded interface

作　　者：盖红星[1] 邓军[1] 廉鹏[1] 俞波[1] 李建军[1] 韩军[1] 陈建新[1] 沈光地[1] 

机构地区：[1]北京工业大学电控学院光电子技术实验室,北京100022

出　　处：《功能材料与器件学报》2006年第3期207-210,共4页Journal of Functional Materials and Devices

基　　金：国家自然科学基金资助项目(No.60276033No.69889601);国家863高技术计划资助项目(No.2002AA312070);国家973计划资助项目(No.G20000683-02);北京市自然科学基金资助项目(No.4021001);北京市教委资助项目(No.01kJ-014)

摘　　要：应用金属有机化合物气相淀积(MOCVD)制备了具有渐变层的半导体布拉格反射镜(DBR),分别是抛物线性、线性和突变结构的DBR。三种反射镜结构都设计为8个周期,通过白光反射谱测量突变DBR具有最大反射率。应用原子力显微镜对所制备的DBR表面形貌进行分析。结果表明,相同周期数情况下线性渐变DBR相对于其他两种结构粗糙度最小,具有良好的表面形貌,可以应用于垂直腔面发射激光器的研制。The interface parabolic graded, linear graded and abrupt distributed bragg reflectors （DBRs） were grown by metal organic chemical vapor deposition（MOCVD）. All the samples were designed 8 periods. White light reflectance test results show that the maximum reflectivity of the interface abrupt DBR is larger than that of the others. The atomic force microscopy （AFM） was used to investigate the surface morphology of the three type DBRs. It is shown that the interface linear graded DBR has the minimum roughness and better surface morphology, which can be used in the fabrication of vertical cavity surface emitting lasers.

关 键 词：布拉格反射镜 金属有机化合物气相淀积 原子力显微镜 ALGAAS 

分 类 号：TN304.054[电子电信—物理电子学]