衬底负偏置对FLASH器件耐久性退化的影响  

Effects of Reverse Substrate Bias on the Endurance Degradation of FLASH Memory Devices

作　　者：石凯[1] 许铭真[1] 谭长华[1] 

机构地区：[1]北京大学微电子学系,北京100871

出　　处：《Journal of Semiconductors》2006年第6期1115-1119,共5页半导体学报（英文版）

基　　金：国家重点基础研究专项基金资助项目(批准号:TG2000036503)~~

摘　　要：研究了ETOXTM结构FLASHmemory单元器件在VFG≈VD/2的热载流子写入应力条件下,衬底负偏置对单元器件耐久性退化的影响.结果表明:在既定的栅、漏偏置条件下,随着衬底负偏置的增加,器件耐久性退化会出现极小值.综合考虑了器件耐久性退化以及写入效率两方面的要求以后,确定了在VFG≈VD/2热载流子写入应力模式下,FLASHmemory单元器件具有增强写入效率以及最小耐久性退化的最佳衬底负偏置条件.The effects of reverse substrate bias on the endurance degradation of ETOXTM FLASH memory devices under the stress mode VPG ≈ VD/2 are investigated. The results indicate that as the reverse substrate bias increases the injection efficiency, the endurance degradation of the device is minimized under certain reverse substrate bias. Taking both the device endurance degradation and the injection efficiency into account, a FLASH memory device with optimal reverse substrate bias under the stress mode VFG ≈ VD/2 is obtained with the minimum endurance degradation and the greatest injection efficiency.

关 键 词：FLASH MEMORY 热载流子 耐久性 碰撞电离 

分 类 号：TP333[自动化与计算机技术—计算机系统结构]