高性能超宽带单片数字衰减器设计与实现  

Design and Fabrication of Excellent Ultra-Broad Digital Attenuator Chips

作　　者：王会智[1] 李拂晓[1] 

机构地区：[1]南京电子器件研究所,南京210016

出　　处：《Journal of Semiconductors》2006年第6期1125-1128,共4页半导体学报（英文版）

摘　　要：介绍了一种高性能50MHz～20GHz的超宽带5bitGaAs数字衰减器的设计、制造和测试结果,并着重介绍实现超宽带的设计.该衰减器通过标准0.5μm离子注入工艺实现.最终的单片衰减器性能如下:插入损耗<5dB;最大衰减量>31dB;两端口所有态的电压驻波比<1.5;所有态衰减精度<±0.3dB;相位变化量(相对于基态)在-5°～20°之间;1dB压缩点输入功率22dBm(10GHz).This paper describes the design, fabrication, and testing of an MMIC digital attenuator covering the range of 50MHz-20GHz and also describes in detail how to realize an ultra-broad attenuator. This attenuator is fabricated in a 0.5μm ion-implanted process. The attenuator shows exceptional performance,with an insertion loss of reference state of less than 5dB. The input and output VSWRs are better than 1.5 ： 1 over all states and the entire frequency range. The attenuation accuracy is within ± 0.3dB （the actual attenuation-the attenuation setting）. The phase variation （reference to insertion state） is between - 5～20. The 1dB compression point is 22dBm（at 10GHz）.

关 键 词：超宽带 GAAS 数字衰减器 MESFET 

分 类 号：TN715[电子电信—电路与系统]