同质缓冲层对ZnO薄膜光学性质的影响  

Influence of Homo-buffer Layers on Optical Properties of ZnO Thin Films

作　　者：朱慧群[1] 丁瑞钦[1] 蔡继业[2] 胡怡[2] 

机构地区：[1]五邑大学薄膜与纳米材料研究所,广东江门529020 [2]暨南大学化学系,广东广州510632

出　　处：《电子元件与材料》2006年第7期48-51,共4页Electronic Components And Materials

基　　金：广东省自然科学基金资助项目(04011770);广东省江门市科技计划基金资助项目(江财企2004.59号)

摘　　要：利用射频磁控溅射技术,在单晶硅衬底上生长出高质量(0002)晶面取向的ZnO外延薄膜。通过XRD、AFM、吸收光谱、光致荧光发光谱的实验研究,发现加入适当厚度的、低温生长的ZnO同质缓冲层,可有效降低晶格失配和因热膨胀系数不同引起的晶格畸变。在衬底温度200℃、沉积时间5min的ZnO缓冲层上,以450℃衬底温度溅射ZnO薄膜主层,得到的ZnO样品的晶体结构、表面形貌和光学性质均有较明显的改善。（0002） orientated ZnO films were deposited on silicon substrates by radio frequency （RF） magnetron sputtering technique. The samples were investigated by X-ray diffraction, atomic force microscope, optical absorption and photoluminescence （PL） spectra. It is discovered that the homo-buffer layer at low temperature can reduce the lattice distortion caused by lattice misfit and difference of the thermal expansion coefficients. The structure, surface morphology and optical properties of the ZnO films which are deposited at 450℃ on homo-buffer layer fabricated at 200℃ are improved significantly.

关 键 词：半导体技术 射频磁控溅射 ZNO薄膜 同质缓冲层 PL谱 

分 类 号：O472.3[理学—半导体物理] TB383[理学—物理]