金属诱导生长多晶锗硅薄膜的电学性能研究  

Electrical Properties of PolySiGe Grown by Metal-Induced Growth

作　　者：吴贵斌[1] 叶志镇[1] 赵星[1] 刘国军[1] 赵炳辉[1] 

机构地区：[1]浙江大学硅材料国家重点实验室,浙江杭州310027

出　　处：《真空科学与技术学报》2006年第3期236-239,共4页Chinese Journal of Vacuum Science and Technology

基　　金：国家科技部攀登项目(No.981101040);浙江计划项目(No.991110535)

摘　　要：采用超高真空化学气相沉积与金属诱导相结合的方法生长多晶SiGe薄膜。530℃下,金属Ni先与SiGe反应生成Ni硅化物,直至Ni被完全消耗完,接着多晶SiGe薄膜在Ni硅化物上异质生长;首次制作了Al/PolySiGe/Ni Silicide肖特基二极管,对器件的I-V特性测试表明,采用这种结构制备的肖特基结在±1 V时,整流比可达到8 000,而在-2 V时反向漏电流只有10-7A,显示出很好的器件性能。A novel technique has been developed to fabricate Al/polySiGe/Ni silicides Schottky diode by metal-induced growth and by ultra high vacuum chemical vapor deposition （UHV/CVD） on n-type Si（100） substrate. In the technique, firstly, Ni layer of 30 nm thick is vacuum evaporated on thermally oxidized n-type Si（100） with an amorphous SiO2 layer of 300 nm, then, Ni film reacts with a gaseous mixture of Sill4, GeH4, H2 and phosphine at a substrate temperature of 530 ℃ to form nickel silicides until Ni layer exhausts and finally, Al/poly SiGe/ Ni silicides Schottky diode is fabricated by depositing aluminum layer as electrode on amorphous SiGe films, grown by CVD on top of Ni sili- cides. 1- V characteristics of the diode show that the rectification ratio reaches 8 000 at bias voltages of ＋ 1 V, and the leakage current is lower that 10.7 A at a reverse bias of - 2 V.

关 键 词：超高真空化学气相沉积 多晶锗硅 金属诱导生长 肖特基二极管 

分 类 号：TN304[电子电信—物理电子学]